Conduction coefficient modeling in bilayer graphene based on schottky transistors
نویسندگان: ثبت نشده
چکیده مقاله:
Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors. The basis of single electron devices (SEDs) is controllable single electron transfer between small conducting islands. Based on the important points in quantum mechanics, when a wave passes through several spatial regions with different boundaries, the wave function of the first region differs from the second and third wave functions. But the boundary conditions are similar in neighboring areas. The single-electron transistor as a nano-switch can control the current. In the single electron transistor, the velocity of current is influenced by the characteristics of materials such as conductivity. Therefore, the choice of two-dimensional graphene as a material with high conductivity can be increase speed in single-electron transistor. In this research, proposed a model of conductivity for single electron transistor with island as bilayer graphene. Also, the diagram of G-Vg is plotted and the number of key factors is checked.
منابع مشابه
Quantum modeling of light absorption in graphene based photo-transistors
Graphene based optical devices are highly recommended and interested for integrated optical circuits. As a main component of an optical link, a photodetector based on graphene nano-ribbons is proposed and studied. A quantum transport model is presented for simulation of a graphene nano-ribbon (GNR) -based photo-transistor based on non-equilibrium Green’s function method. In the proposed model a...
متن کاملNovel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions
Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm(2)/V · s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where th...
متن کاملPhysical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors
A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increase...
متن کاملSchottky Diode Graphene Based Sensors
In this paper, we aim to demonstrate a novel scheme for integration of nanostructured semiconductor Graphene Oxide (GO) shottky diodes on flexible substrate for a wide range of sensing applications. The platform introduces a novel flexible GO/Pt/n-Si and GO/Pt/SiN composite structures which provides excellent optical and electrical properties, while maintaining an acceptable mechanical, biocomp...
متن کاملHysteresis modeling in graphene field effect transistors
Graphene field effect transistors with an Al2O3 gate dielectric are fabricated on H-intercalated bilayer graphene grown on semi-insulating 4H-SiC by chemical vapour deposition. DC measurements of the gate voltage vg versus the drain current id reveal a severe hysteresis of clockwise orientation. A capacitive model is used to derive the relationship between the applied gate voltage and the Fermi...
متن کاملA circuit model for defective bilayer graphene transistors
This paper investigates the behaviour of a defective single-gate bilayer graphene transistor. Point defects were introduced into pristine graphene crystal structure using a tightly focused helium ion beam. The transfer characteristics of the exposed transistors were measured ex-situ for different defect concentrations. The channel peak resistance increased with increasing defect concentration w...
متن کاملمنابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ذخیره در منابع من قبلا به منابع من ذحیره شده{@ msg_add @}
عنوان ژورنال
دوره 7 شماره 4
صفحات 285- 289
تاریخ انتشار 2018-01-01
با دنبال کردن یک ژورنال هنگامی که شماره جدید این ژورنال منتشر می شود به شما از طریق ایمیل اطلاع داده می شود.
کلمات کلیدی
میزبانی شده توسط پلتفرم ابری doprax.com
copyright © 2015-2023